Henry Radamson

Henry Radamson

  • Avdelning: Institutionen för elektronikkonstruktion (EKS)
  • E-postadress: henry.radamson@miun.se
  • Ort: Sundsvall

Publikationer

Artiklar i tidskrifter

Zhao, X. , Wang, G. , Lin, H. , Du, Y. , Luo, X. , Kong, Z. , Su, J. , Li, J. & et al. (2021). High performance p-i-n photodetectors on ge-on-insulator platform. Nanomaterials, vol. 11: 5    

Du, Y. , Kong, Z. , Toprak, M. , Wang, G. , Miao, Y. , Xu, B. , Yu, J. , Li, B. & et al. (2021). Investigation of the heteroepitaxial process optimization of ge layers on si (001) by rpcvd. Nanomaterials, vol. 11: 4    

Miao, Y. , Wang, G. , Kong, Z. , Xu, B. , Zhao, X. , Luo, X. , Lin, H. , Dong, Y. & et al. (2021). Review of Si-based GeSn CVD growth and optoelectronic applications. Nanomaterials, vol. 11: 10  

Li, Y. , Wang, G. , Akbari-Saatlu, M. , Procek, M. & Radamson, H. H. (2021). Si and SiGe Nanowire for Micro-Thermoelectric Generator : A Review of the Current State of the Art. Frontiers in Materials, vol. 8    

Du, Y. , Wang, G. , Miao, Y. , Xu, B. , Li, B. , Kong, Z. , Yu, J. , Zhao, X. & et al. (2021). Strain modulation of selectively and/or globally grown ge layers. Nanomaterials, vol. 11: 6    

Li, J. , Li, Y. , Zhou, N. , Wang, G. , Zhang, Q. , Du, A. , Zhang, Y. , Gao, J. & et al. (2020). A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm. Materials, vol. 13: 3    

Qin, C. , Yin, H. , Wang, G. , Zhang, Y. , Liu, J. , Zhang, Q. , Zhu, H. , Zhao, C. & et al. (2020). A novel method for source/drain ion implantation for 20 nm FinFETs and beyond. Journal of materials science. Materials in electronics, vol. 31, ss. 98-104.  

Zhao, X. , Moeen, M. , Toprak, M. S. , Wang, G. , Luo, J. , Ke, X. , Li, Z. , Liu, D. & et al. (2020). Design impact on the performance of Ge PIN photodetectors. Journal of materials science. Materials in electronics, vol. 31, ss. 18-25.  

Li, C. , Lin, H. , Li, J. , Yin, X. , Zhang, Y. , Kong, Z. , Wang, G. , Zhu, H. & et al. (2020). Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application. Nanoscale Research Letters, vol. 15: 1  

Wang, G. , Kolahdouz, M. , Luo, J. , Qin, C. , Gu, S. , Kong, Z. , Yin, X. , Xiong, W. & et al. (2020). Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS). Journal of materials science. Materials in electronics, vol. 31, ss. 26-33.  

Li, C. , Zhu, H. , Zhang, Y. , Yin, X. , Jia, K. , Li, J. , Wang, G. , Kong, Z. & et al. (2020). Selective digital etching of silicon-germanium using nitric and hydrofluoric acids. ACS Applied Materials and Interfaces, vol. 12: 42, ss. 48170-48178.  

Xiong, W. , Jiang, H. , Li, T. , Zhang, P. , Xu, Q. , Zhao, X. , Wang, G. , Liu, Y. & et al. (2020). SiNx films and membranes for photonic and MEMS applications. Journal of materials science. Materials in electronics, vol. 31, ss. 90-97.  

Xie, L. , Zhu, H. , Zhang, Y. , Ai, X. , Wang, G. , Li, J. , Du, A. , Kong, Z. & et al. (2020). Strained Si0.2ge0.8/ge multilayer stacks epitaxially grown on a low-/high-temperature ge buffer layer and selective wet-etching of germanium. Nanomaterials, vol. 10: 9, ss. 1-12.  

Yin, X. , Zhu, H. , Zhao, L. , Wang, G. , Li, C. , Huang, W. , Zhang, Y. , Jia, K. & et al. (2020). Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1-xGex. ECS Journal of Solid State Science and Technology, vol. 9: 3  

Liu, J. , Wang, G. , Li, J. , Kong, Z. & Radamson, H. H. (2020). Study of n-type doping in germanium by temperature based PF+ implantation. Journal of materials science. Materials in electronics, vol. 31, ss. 161-166.  

Li, J. , Wang, W. , Li, Y. , Zhou, N. , Wang, G. , Kong, Z. , Fu, J. , Yin, X. & et al. (2020). Study of selective isotropic etching Si1−xGex in process of nanowire transistors. Journal of materials science. Materials in electronics, vol. 31: 1, ss. 134-143.  

Li, J. , Li, Y. , Zhou, N. , Xiong, W. , Wang, G. , Zhang, Q. , Du, A. , Gao, J. & et al. (2020). Study of silicon nitride inner spacer formation in process of gate-all-around nano-transistors. Nanomaterials, vol. 10: 4    

Yin, X. , Yang, H. , Xie, L. , Ai, X. Z. , Zhang, Y. B. , Jia, K. P. , Wu, Z. H. , Ma, X. L. & et al. (2020). Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation. IEEE Electron Device Letters, vol. 41: 1, ss. 8-11.  

Radamson, H. H. , He, X. , Zhang, Q. , Liu, J. , Cui, H. , Xiang, J. , Kong, Z. , Xiong, W. & et al. (2019). Miniaturization of CMOS. Micromachines, vol. 10: 5    

Lixing, Z. , Xiaolei, W. , Kai, H. , Xueli, M. , Yanrong, W. , Jinjuan, X. , Hong, Y. , Jing, Z. & et al. (2018). Understanding dipole formation at dielectric/dielectric hetero-interface. Applied Physics Letters, vol. 113: 18  

Artiklar, forskningsöversikter

Xiong, W. , Wang, G. , Li, J. , Zhao, C. , Wang, W. & Radamson, H. H. (2021). SiN-based platform toward monolithic integration in photonics and electronics. Journal of materials science. Materials in electronics, vol. 32, ss. 1-18.  

Akbari-Saatlu, M. , Procek, M. , Mattsson, C. , Thungström, G. , Nilsson, H. , Xiong, W. , Xu, B. , Li, Y. & et al. (2020). Silicon Nanowires for Gas Sensing : A Review. Nanomaterials, vol. 10: 11    

Radamson, H. H. , Zhu, H. , Wu, Z. , He, X. , Lin, H. , Liu, J. , Xiang, J. , Kong, Z. & et al. (2020). State of the Art and Future Perspectives in Advanced CMOS Technology. Nanomaterials, vol. 10: 8    

Konferensbidrag

Akbari-Saatlu, M. , Procek, M. , Thungström, G. , Mattsson, C. & Radamson, H. H. (2021). H2S gas sensing based on SnO2thin films deposited by ultrasonic spray pyrolysis on Al2O3substrate. I 2021 IEEE Sensors Applications Symposium (SAS).